unisonic technologies co., ltd tf218 jfet www.unisonic.com.tw 1 of 4 copyright ? 2014 unisonic technologies co., ltd qw-r206-093.f n-ch a nnel junction field effect transistor ? description the utc tf218 is an n-channel junction field effect transistor, and it can be specially used in electronic condenser microphone specially. ? features * good voltage characteristics and transient characteristics. ? ordering information ordering number package pin assignment packing 1 2 3 TF218G-X-AN3-R sot-523 s d g tape reel tf218g-x-aq3-r sot-723 s d g tape reel note: pin assignment: s: source d: drain g: gate ? marking tf218-e3 tf218-e4 tf218-e5
tf218 jfet unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r206-093.f ? absolute maximum rating (t a =25 , unless otherwise specified) parameter symbol ratings unit gate to drain voltage v gdo -20 v gate current i g 10 ma drain current i d 1 ma power dissipation p d 100 mw junction temperature t j 150 storage temperature t stg -55~+150 note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (t a =25 , unless otherwise specified) parameter symbol test conditions min typ max unit g-d breakdown voltage bv gdo i g =-100ua -20 v gate off voltage v gs ( off ) v ds =5.0v, i d =1ua -0.2 -0.6 -1.0 v drain current i dss v ds =2.0v, v gs =0 100 350 a forward transfer admittance |yfs| v ds =2.0v, v gs =0, f=1khz 0.65 1.0 ms input capacitance ciss v ds =5.0v, v gs =0, f=1mhz 3.5 pf reverse transfer capacitance crss v ds =5.0v, v gs =0, f=1mhz 0.65 pf voltage gain g v v in =10mv, f=1khz -3.0 db reduced voltage characteristic g vv v in =10mv, f=1khz v cc =4.5 ? 1.5v -1.2 -3.5 db frequency characteristic g vf f=1khz~110hz -1.0 db input resistance z in f=1khz 25 m ? output resistance z o f=1khz 1000 ? total harmonic distortion thd v in =30mv, f=1khz 1.2 % output noise voltage v no v in =0, a curve -110 db ? classification of i dss rank e3 e4 e5 range 100-170 140-240 210-350
tf218 jfet unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r206-093.f ? test circuit (t a =25 , unless otherwise specified)
tf218 jfet unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r206-093.f ? typical characteristics drain current, i d (a) source current, -i s (a) gate-drain voltage drain current, i d (a) gate-drain voltage, -v gdo (v) 0 20 40 60 100 120 140 010 4050 20 30 80 gate-source voltage drain current, i d (a) gate-source voltage, -v gs (v) 0 40 80 120 200 240 280 0 0.2 0.8 1.0 0.4 0.6 160 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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